Light emitting diodes

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1-Transistor-Dynamic Random Access Memory as Reservoir for Temporal Signal Processing

1-Transistor-Dynamic Random Access Memory as Reservoir for Temporal Signal Processing 150 150
Author(s): Md Yasir Bashir, Lalith Adithya Sai C., Shubham Sahay

Abstract:

Reservoir computing (RC), a computational paradigm inspired by the recurrent neural networks (RNNs), offers a promising framework for efficient temporal processing with minimal training overhead. Hardware implementation of RC primitive requires devices that exhibit short-term memory, nonlinearity, and energy-efficient state-switching dynamics. While emerging nonvolatile memory (eNVM) technologies have been explored …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 120 – 128
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3690766
Publisher: IEEE

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A Complementary Positive Feedback-Assisted Current Mirror-Based Level Shifter for Energy-Efficient Level Conversion for Wide Voltage Ranges

A Complementary Positive Feedback-Assisted Current Mirror-Based Level Shifter for Energy-Efficient Level Conversion for Wide Voltage Ranges 150 150
Author(s): Shin Han, Gicheol Shin, Jongmin Lee, Yoonmyung Lee

Abstract:

A complementary positive feedback-assisted current mirror-based level shifter (CPFLS) is proposed to reliably convert subthreshold signals to higher voltages. By adopting a positive feedback structure, the CPFLS mitigates the delay degradation and short-circuit current issues inherent in a prior art, WCMLS, due to its negative feedback design. Additionally, the CPFLS …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3687258
Publisher: IEEE

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A Novel VGSOT-pMTJ Write Circuit for Hybrid CMOS/MTJ CIM Architecture

A Novel VGSOT-pMTJ Write Circuit for Hybrid CMOS/MTJ CIM Architecture 150 150
Author(s): Prashanth Barla, Ramya Moodakare

Abstract:

Hybrid computation-in-memory (CIM) architecture has emerged as the most promising alternative to overcome the drawbacks of the conventional CMOS-only devices used in the conventional von-Neumann architecture. In the hybrid CIM architecture, a pair of perpendicular magnetic tunnel junctions (pMTJs) is used to store one bit of information. Though there are …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 65 – 69
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3679830
Publisher: IEEE

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A 1.16 e-rms Temporal Random Noise, 123-dB High Dynamic Range, 2.988-μm Pitch 3-Mpixel Three-Stacked Digital Pixel Sensor for Versatile Applications

A 1.16 e-rms Temporal Random Noise, 123-dB High Dynamic Range, 2.988-μm Pitch 3-Mpixel Three-Stacked Digital Pixel Sensor for Versatile Applications 150 150
Author(s): Min-Woong Seo, Yong-Suk Choi, Sanggwon Lee, Yeongseok Shim, Gihwan Cho, Daehee Bae, Masamichi Ito, Jaehun Jeong, Hiroyuki Sugihara, Si-Gyoung Koo, Sung-Jae Byun, Hyukbin Kwon, Youna Lee, Bumjun Kim, Su-Hyun Han, Suksan Kim, Wonoh Ryu, Kwan-Sik Kim, Yongjun Kim, Seung-Sik Kim, Junghoon Jung, Sun-Young Yoo, Jinkyeong Heo, Seung-Chul Shin, Heesung Shim, Jae-Kyu Lee, Jonghyun Go, Jaihyuk Song

Abstract:

This article presents a 3-Mpixel (Mp) three-stacked digital pixel sensor (DPS) featuring the world’s smallest pixel pitch of $2.988~\mu $ m, achieving a low temporal random noise (RN) of 1.16 e-rms and a high dynamic range (HDR) of 123 dB in global-shutter (GS) operation mode for versatile applications. To realize both the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1319 – 1332
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663214
Publisher: IEEE

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