HCD

Impact of Aging, Self-Heating and Parasitics Effects on NSFET and CFET

Impact of Aging, Self-Heating and Parasitics Effects on NSFET and CFET 150 150

Abstract:

This work presents a comparative analysis of Complementary Field-Effect Transistor (CFET) and Nanosheet FET (NSFET) architectures, with a focus on self-heating effects (SHE), Negative Bias Temperature Instability (NBTI), Hot Carrier Degradation (HCD), and the impact of Back-End-of-Line (BEOL) parasitics on standard cell performance. NBTI degradation is modeled using a framework …

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