far-end pre-charge (FPC)

A 3-nm FinFET 27.6-Mbit/mm2 Single-Port 6T SRAM Enabling 0.48–1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking

A 3-nm FinFET 27.6-Mbit/mm2 Single-Port 6T SRAM Enabling 0.48–1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking 150 150

Abstract:

A 3-nm FinFET single-port (SP) 6T SRAM macro is proposed that utilizes a far-end pre-charge (FPC) circuit and weak-bit (WB) tracking circuit. These circuits can decrease write cycle time by decreasing the pre-charge period and engaging read cycle time by enhancing the trackability of sense enable timing over supply voltage. …

View on IEEE Xplore