embedded dynamic random access memory (eDRAM)

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CTH-CAM: A Cryogenic eDRAM-Based CAM With 1–26 Tunable Hamming Distance

CTH-CAM: A Cryogenic eDRAM-Based CAM With 1–26 Tunable Hamming Distance 150 150
Author(s): Jincheng Wang, Yuxin Zhou, Bin Ning, Lintao Lan, Yifei Li, Xufeng Kou, Yuhao Shu, Yajun Ha

Abstract:

Cryogenic approximate content-addressable memory (ACAM) offers an appealing solution that allows mismatches between the query and the stored data, measured by the Hamming distance (HD). However, in ACAM designs, increasing the word length shrinks the matchline (ML) voltage spacing between adjacent HD tolerance levels, thereby limiting the tunable-HD tolerance range …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3722705
Publisher: IEEE

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DPe-CIM: A 4T-1C Dual-Port eDRAM-Based Compute-in-Memory for Simultaneous Computing and Refresh With Adaptive Refresh and Data Conversion Reduction Scheme

DPe-CIM: A 4T-1C Dual-Port eDRAM-Based Compute-in-Memory for Simultaneous Computing and Refresh With Adaptive Refresh and Data Conversion Reduction Scheme 150 150
Author(s): Do Han Kim, Minyoung Jo, Gi Seok Kim, Dong Gyun Ha, Ung Bin Oh, Donghan Ko, Jiwoo Lee, Mingu Kang, Seong-Ook Jung

Abstract:

This article presents DPe-CIM, a 4T-1C dual-port embedded dynamic random access memory (eDRAM)-based compute-in-memory (CIM) macro with adaptive refresh and data conversion reduction. DPe-CIM proposes four key features that improve area and energy efficiency: 1) dual-port eDRAM cell (DPC) separates the multiply-and-accumulate (MAC) and refresh ports, enabling simultaneous MAC …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3623117
Publisher: IEEE

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