Discharges (electric)

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A 37.8 Mb/mm² SRAM in Intel 18A Technology Featuring a Resistive Supply-Line Write Scheme and Write-Assist With Parallel Boost Injection

A 37.8 Mb/mm² SRAM in Intel 18A Technology Featuring a Resistive Supply-Line Write Scheme and Write-Assist With Parallel Boost Injection 150 150
Author(s): Harold Pilo, Manish Arora, Chien-An Lai, Mike Lee, Zack Lo, Mayur Randeria

Abstract:

A high-density (HD), SRAM-based register file (RF) has been demonstrated in Intel 18A Technology (Wang et al., 2025 and Pilo et al., 2025) featuring RibbonFET GAA transistors and a back side power delivery network (BSDPN). The RF is optimized for HD and array efficiency and achieves a density of 37.8 Mb/mm2, the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 357 – 360
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3628176
Publisher: IEEE

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Ultra-Low-Power Dynamic-Bias Comparators With Self-Clocked Latch in 65-nm CMOS

Ultra-Low-Power Dynamic-Bias Comparators With Self-Clocked Latch in 65-nm CMOS 150 150
Author(s): Anojh Kumaran Rajendra, Harijot Singh Bindra, Bram Nauta

Abstract:

This article introduces two comparators featuring a dynamic-bias preamplifier and self-clocked latches, tailored for ultra-low-power and medium-speed applications with <500- $\mu $ V input-referred noise (IRN). The proposed self-clocked latches are activated by the preamplifier outputs and therefore operate with a lower common-mode current, which in turn minimizes the crowbar current …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3612157
Publisher: IEEE

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A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance

A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance 150 150
Author(s): Esteban Garzón, Eyal Rechef, Roman Golman, Odem Harel, Yuval Harary, Paz Snapir, Marco Lanuzza, Adam Teman, Leonid Yavits

Abstract:

The growing need for approximate matching in data-intensive applications, such as data analytics, machine learning, deep learning, and computational genomics has driven the proposal of our Hamming distance (HD) tolerant content-addressable memory (HD-CAM). HD-CAM features a modified NOR-type associative memory cell that leverages the discharge speed of the matchline (ML) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3009 – 3019
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3529715
Publisher: IEEE

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