cryogenic

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A Cryo-CMOS Smart Temperature Sensor for the Ultrawide Temperature Range From 5 K to 296 K

A Cryo-CMOS Smart Temperature Sensor for the Ultrawide Temperature Range From 5 K to 296 K 150 150
Author(s): D. Cerviño Fungueiriño, L. A. Enthoven, J. van Staveren, M. Babaie, F. Sebastiano

Abstract:

This work presents a cryo-CMOS smart temperature sensor operating from room temperature down to 5 K. By adopting sensing elements (CMOS bulk diodes, pMOS/DTMOS in weak inversion) that circumvent the poor cryogenic performance of Si BJTs, a robust switched-capacitor second-order sigma–delta readout and cryogenic-aware design techniques, the sensor achieves …

Published in: IEEE Solid-State Circuits Letters
Page(s): 29 – 32
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3650657
Publisher: IEEE

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A Cryo-BiCMOS Controller for Quantum Computers based on Trapped Beryllium Ions

A Cryo-BiCMOS Controller for Quantum Computers based on Trapped Beryllium Ions 150 150
Author(s): Peter Toth, Paul Shine Eugine, Yerzhan Kudabay, Kaoru Yamashita, Sebastian Halama, Judi Parvizinejad, Marco Bonkowski, Hiroki Ishikuro, Christian Ospelkaus, Vadim Issakov

Abstract:

This article presents a cryo-BiCMOS system on chip (SoC) designed for single and two-qubit gate operations for quantum computers (QCs) based on beryllium trapped-ions (TIs). Signal generation from 0.7 to 1.6 GHz is supported, covering all microwave transitions in a ${}^{9}\text {Be}^{+}$ QC realization. An integrated 48-kbit waveform memory is implemented for …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 673 – 689
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3632204
Publisher: IEEE

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An Investigation of Minimum Supply Voltage of 5-nm SRAM From 300 K Down to 10 K

An Investigation of Minimum Supply Voltage of 5-nm SRAM From 300 K Down to 10 K 150 150
Author(s): Hafeez Raza, Shivendra Singh Parihar, Yogesh Singh Chauhan, Hussam Amrouch, Avinash Lahgere

Abstract:

In this article, we present a comprehensive study of the impact of cryogenic temperatures on the minimum operating voltage ( $V_{\min }$ ) of 5-nm Fin Field-Effect Transistors (FinFETs)-based Static Random Access Memory (SRAM) cells. To perform the SRAM $V_{\min }$ evaluation, we have measured the FinFETs fabricated using a commercial 5…

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 42 – 50
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3560215
Publisher: IEEE

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