A 100+Gb/s 252–283-GHz RF-Amplifier-Integrated TX/RX Chipset in Standard 65-nm Bulk CMOS https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8fcdccb598784519a6037b6f80b02dee03caa773fc8d223c13bfce179d70f915?s=96&d=mm&r=g
Abstract:
This article presents a 252–283-GHz amplifier-last transmitter (TX) and amplifier-first receiver (RX) wireless front end in standard 65-nm bulk CMOS technology, targeting IEEE 802.15.3d/802.15.3-compliant high-speed point-to-point wireless communications. To overcome the challenges of limited transistor gain and high passive loss that often limit the implementation of J-band RF amplifiers, …