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Abstract:
Silicon, and in particular CMOS technology, has been the workhorse of the semiconductor industry for several decades. Its combination of manufacturing maturity, cost efficiency, scalability, and high integration density has made CMOS the dominant platform for a wide range of applications, from consumer electronics to data centers. However, silicon is not always the optimal material for delivering very high-power levels or operating at extremely high frequencies. In these domains, III-V semiconductor materials often offer superior performance owing to their favorable electronic properties.

Among these materials, gallium nitride (GaN) has attracted significant attention in recent years. Its wide bandgap, high breakdown voltage, and excellent electron transport characteristics make it particularly well-suited for power electronics and RF applications, while emerging opportunities are also being explored in photonics. In this lecture, we will provide an overview of the GaN industry and technology landscape, with a particular focus on RF applications. We will also discuss the growing importance of GaN for next-generation computing infrastructure, including efficient power delivery solutions for AI-driven data centers and high-performance communication systems.

Speaker: Nadine Collaert (Imec Fellow & Professor at VUB)

Date: Monday, December 7, 2026

Time: 10:00 AM ET


About the Speaker

Nadine Collaert

Nadine Collaert

Imec Fellow | Part-time Professor, VUB

Nadine Collaert is an imec fellow and part-time professor at VUB (Brussels, Belgium). She is currently leading the technology office in the connected computing sector, focusing on identifying cutting-edge advancements in wireless, wireline, and optical communications, as well as emerging computing technologies, to drive future innovation.

Before that, she was responsible for the advanced RF program, looking at heterogeneous integration of III-V/III-N devices with advanced CMOS to tackle the challenges of next-generation mobile communication. Prior to that, she was program director of the LOGIC Beyond Si program focused on research into novel CMOS devices and new material-enabled device and system approaches to increase functionality.

She has been involved in the theory, design, and technology of FinFET devices, emerging memories, transducers for biomedical applications, and the integration and characterization of biocompatible materials. She holds a Ph.D. in electrical engineering from KU Leuven, has authored more than 500 publications, and holds over 15 patents in device design and process technology.

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