IEEE Journal of Solid-State Circuits

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A 28-Gb/mm2 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs

A 28-Gb/mm2 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs 150 150
Author(s): Sang-Soo Park, Jae-Doeg Lyu, Myungjun Kim, Jaeyun Lee, Youngsun Song, Chung-Ho Yu, Hirano Makoto, Yongseok Kwon, Jong-Hoon Park, Ho-Joon Kim, Daein Lee, Donghyun Seo, Philkyu Kang, Byungrok Go, Minseok Kim, Seoyoon Jeon, Jaehwan Ryu, Jungmin Seo, Hwan-Seok Ku, Youngmin Jo, Doo-Hyun Kim, Hyunjun Yoon, Wontae Kim, Inmo Kim, Sunghoon Kim, Jiho Cho, Moosung Kim, Jae-Woo Im, Jongmin Park, Youngdon Choi, Il-Han Park, Chiweon Yoon, Hyunsuk Kim, Jaehoon Jang, Seungjae Lee, Ki-Whan Song, Sung-Hoi Hur

Abstract:

The challenge of evolving to create a memory that is shrinking compared to the previous generation while satisfying the high performance and low power required for flash memory has been present in every generation, but the recent rapid change to artificial intelligence (AI) trends is very tough, as the level …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 9
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3613774
Publisher: IEEE

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IRIS: An Energy-Efficient Spatial Computing SoC for Real-Time Interactive Rendering and Modeling With Surface-Aware 3-D Gaussian Splatting

IRIS: An Energy-Efficient Spatial Computing SoC for Real-Time Interactive Rendering and Modeling With Surface-Aware 3-D Gaussian Splatting 150 150
Author(s): Seokchan Song, Seryeong Kim, Wonhoon Park, Jongjun Park, Sanghyuk An, Gwangtae Park, Minseo Kim, Hoi-Jun Yoo

Abstract:

The 3-D Gaussian splatting (3DGS), based on a machine learning-driven radiance field technique, is rapidly emerging as a next-generation solution in 3-D graphics. Owing to its short modeling time, computational simplicity, and high rendering quality, it is expected to replace traditional 3-D graphics on edge devices. However, its substantial memory …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3613707
Publisher: IEEE

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A 4.6 μW, 133-VPP Common-Mode Interference-Tolerant Biopotential Amplifier for Two-Electrode Recording System in 110-nm CMOS

A 4.6 μW, 133-VPP Common-Mode Interference-Tolerant Biopotential Amplifier for Two-Electrode Recording System in 110-nm CMOS 150 150
Author(s): Yongjae Park, Yeong-Jin Mo, Jeong-Hoon Kim, Gert Cauwenberghs, Seong-Jin Kim

Abstract:

This article presents a biopotential recording analog front-end (AFE) specifically tailored for a two-electrode measurement system, capable of capturing small biopotential signals while tolerating a large common-mode interference (CMI) over 130 VPP. By leveraging the Miller effect, the proposed CMI-Follower provides a significantly low common-mode input impedance ( $Z_{\text {IN-CM-C}}$ ), achieving …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3613410
Publisher: IEEE

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A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3

A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3 150 150
Author(s): Erwin Hardeveld, Ronan van der Zee, Bram Nauta

Abstract:

In this article, we propose a wideband mixer-first receiver with improved in-band (IB) linearity. It uses bootstrapped N-path mixer switches to achieve a constant on-state gate–source voltage for large IB signals. We analyze the tradeoff between on-state resistance and off-state subthreshold current in conventional mixer switches and introduce a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3606117
Publisher: IEEE

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A 28-nm 8–28-GHz Eight-Phase Clock Generator Using an Injection-Locked Dual-Feedback Ring Oscillator

A 28-nm 8–28-GHz Eight-Phase Clock Generator Using an Injection-Locked Dual-Feedback Ring Oscillator 150 150
Author(s): Yechen Tian, Junjie Gu, Weitao He, Shuai Liu, Rui Yin, Xiaoliang Shen, Long Kong, Hao Xu, Na Yan

Abstract:

The injection-locked ring oscillator is being widely used in high-speed wireline transceivers to generate multi-phase clocks. The fundamental limit lies in the tradeoff between the number of output phases and the maximum operation frequency for a given technology node. This work proposes the dual-feedback ring oscillator that breaks the tradeoff …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3613940
Publisher: IEEE

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A Scalable 1024-Channel Ultra-Low-Power Spike Sorting Chip With Event-Driven Detection and Spatial Clustering

A Scalable 1024-Channel Ultra-Low-Power Spike Sorting Chip With Event-Driven Detection and Spatial Clustering 150 150
Author(s): Arash Akhoundi, Pumiao Yan, Yawende Landbrug, Madeline Hays, Boris Murmann, E. J. Chichilnisky, Dante G. Muratore

Abstract:

This article presents a 1024-channel ultra-low-power spike sorting chip featuring event-driven spike detection and spatial clustering for large-scale neural recording. To address power and scalability constraints in brain–computer interfaces (BCIs), the design integrates a compressive analog-to-digital converter (ADC) with a two-stage spike detector that significantly reduces memory and processing …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3611139
Publisher: IEEE

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Ultra-Low-Power Dynamic-Bias Comparators With Self-Clocked Latch in 65-nm CMOS

Ultra-Low-Power Dynamic-Bias Comparators With Self-Clocked Latch in 65-nm CMOS 150 150
Author(s): Anojh Kumaran Rajendra, Harijot Singh Bindra, Bram Nauta

Abstract:

This article introduces two comparators featuring a dynamic-bias preamplifier and self-clocked latches, tailored for ultra-low-power and medium-speed applications with <500- $\mu $ V input-referred noise (IRN). The proposed self-clocked latches are activated by the preamplifier outputs and therefore operate with a lower common-mode current, which in turn minimizes the crowbar current …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3612157
Publisher: IEEE

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DPIM: A 2T1C eDRAM Transformer-in-Memory Chip With Sparsity-Aware Quantization and Heterogeneous Dense–Sparse Core

DPIM: A 2T1C eDRAM Transformer-in-Memory Chip With Sparsity-Aware Quantization and Heterogeneous Dense–Sparse Core 150 150
Author(s): Donghyuk Kim, Jae-Young Kim, Hyunjun Cho, Seungjae Yoo, Sukjin Lee, Sungwoong Yune, Sejeong Yang, Hoichang Jeong, Keonhee Park, Ki-Soo Lee, Jongchan Lee, Chanheum Han, Gunmo Koo, Yuli Han, Jaejin Kim, Jaemin Kim, Kyuho Jason Lee, Joo-Hyung Chae, Kunhee Cho, Joo-Young Kim

Abstract:

Transformer models have revolutionized artificial intelligence (AI) applications across various domains, but their increasing complexity poses significant challenges in terms of computational and memory demands. While processing-in-memory (PIM) paradigms have been adopted to address these limitations, existing PIM-based transformer accelerators still face hurdles such as: 1) focusing solely on optimizing attention …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3607826
Publisher: IEEE

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A 25.8% 3σ/μ-Accuracy, 0.12%/°C Temperature Drift Sigma-Delta Modulation Calibrated Pseudo-Resistor With GΩ to TΩ Tuning Range

A 25.8% 3σ/μ-Accuracy, 0.12%/°C Temperature Drift Sigma-Delta Modulation Calibrated Pseudo-Resistor With GΩ to TΩ Tuning Range 150 150
Author(s): Yuzhi Hao, Hua Fan, Yong Lian, Mingyi Chen

Abstract:

This article presents an on-chip self-calibrated pseudo-resistor (PR) based on a sigma-delta modulation (SDM) loop. The proposed real-time calibration mechanism facilitates the implementation of an accurate low-drift ultra-high-value (UHV) PR with a wide tuning range at minimum hardware expenditure. Experimental results demonstrate that the resistance can be precisely tuned from 1.5 …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3612895
Publisher: IEEE

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