IEEE Journal of Solid-State Circuits

A 24.5–45.2-GHz Low-Jitter Compact Differentially Injection-Locked Clock Multiplier With Folded-Inductor-Based Magnetic-Flux Cancellation

A 24.5–45.2-GHz Low-Jitter Compact Differentially Injection-Locked Clock Multiplier With Folded-Inductor-Based Magnetic-Flux Cancellation 150 150

Abstract:

In this article, we present a differentially injection-locked clock multiplier (ILCM) featuring an ultra-wide frequency tuning range (TR) and low jitter, achieved through a compact folded-inductor-based magnetic-flux cancellation technique. A co-designed series-LC dual-mode quadrature ring oscillator (QRO) and edge-combining frequency doubler operating in the mm-wave band jointly extend the TR …

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A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications

A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications 150 150

Abstract:

This article presents a D-band direct-digital modulation (DDM) transmitter with on-chip digital calibration blocks for future beyond-5G (B5G) wireless communication. The proposed DDM architecture mitigates the need for complex intermediate frequency (IF) generation and power-hungry digital-to-analog converters (DACs). The transmitter is implemented primarily in TSMC’s 16-nm p-FinFETs, …

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A 32-Channel 85.4 dB SNDR Time-Multiplexed Neural Recording Front-End Achieving Within-Conversion Artifact Recovery

A 32-Channel 85.4 dB SNDR Time-Multiplexed Neural Recording Front-End Achieving Within-Conversion Artifact Recovery 150 150

Abstract:

This article presents a 32-channel time-multiplexed highly digital neural recording front-end (RFE) that exhibits sub- $8.8~\mu $ s recovery latency from large stimulation artifacts while delivering high-resolution data at the Nyquist rate. The RFE is time-shared across 32 channels for low-frequency electrocorticography (ECoG) recording and across four channels for high-frequency action potentials (…

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A 3 nm FinFET 125 TOPS/W-29 TFLOPS/W, 90 TOPS/mm2-17 TFLOPS/mm2 SRAM-Based INT8, and FP16 Digital-CIM Compiler With Support for Multi-Weight Update/Cycle

A 3 nm FinFET 125 TOPS/W-29 TFLOPS/W, 90 TOPS/mm2-17 TFLOPS/mm2 SRAM-Based INT8, and FP16 Digital-CIM Compiler With Support for Multi-Weight Update/Cycle 150 150

Abstract:

This article presents an static random-access memory (SRAM)-based digital compute-in-memory (CIM) compiler implemented with 3 nm high- $\kappa $ metal gate (HKMG) FinFET technology, supporting flexible INT8 and FP16 formats for weight and activation multiply-accumulate (MAC) operations, offering configuration flexibility, high accuracy, and improved area and power efficiency. The FP16 digital …

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A Bio-Impedance Readout IC With Phase-Locked Sampling for Real-Time Electrical Impedance Spectroscopy

A Bio-Impedance Readout IC With Phase-Locked Sampling for Real-Time Electrical Impedance Spectroscopy 150 150

Abstract:

This article presents an electrical bio-impedance (bioZ) spectroscopy integrated circuit (IC) that achieves both high-throughput and high-accuracy. The proposed phase-locked sampling (PLS) scheme, which employs a sampling phase-locked loop (SPLL) and a reference resistor ( $R_{\textit {REF}}$ ), enables fast and precise impedance demodulation. By extracting the impedance components through sampling …

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A 138 Gb/s D-Band 2-D Scalable Transceiver Array With On-Chip Antennas Achieving Sub-1-pJ/b Efficiency in 28-nm Bulk CMOS

A 138 Gb/s D-Band 2-D Scalable Transceiver Array With On-Chip Antennas Achieving Sub-1-pJ/b Efficiency in 28-nm Bulk CMOS 150 150

Abstract:

This article presents a D-band 2-D scalable phased array that integrates a $2{\,}\times{\,} 2$ transceiving (TRX) radio frequency (RF) beamformer with on-chip antennas (OCAs) and a $\times 16$ local-oscillator (LO) multiplication chain. The 2-D array scalability is demonstrated by tiling $2{\,}\times{\,} 2$ chips into an array using a low-cost package to build a 16…

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A Capacitor-Free Hybrid-Process Low Dropout Regulator With Ultrahigh-Gain Amplifier and Super Source Follower for 0.297 mV/A Load Regulation and 0.024 mV/V Line Regulation

A Capacitor-Free Hybrid-Process Low Dropout Regulator With Ultrahigh-Gain Amplifier and Super Source Follower for 0.297 mV/A Load Regulation and 0.024 mV/V Line Regulation 150 150

Abstract:

The proposed capacitor-free hybrid-process low-dropout regulator (LDO) achieves 900-mA maximum current capacity and 99.99% peak current efficiency with 90 $\mu $ A quiescent current. By combining GaN and silicon processes, the proposed Ultrahigh gain amplifier (UHGA) enables a high loop gain to achieve 0.297-mV/A load regulation and 0.024-mV/V line regulation. Furthermore, …

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A Single-Lead ECG Wearable Sensor With 1.04 s Latency for Cardiac and Biometric Detection Tasks

A Single-Lead ECG Wearable Sensor With 1.04 s Latency for Cardiac and Biometric Detection Tasks 150 150

Abstract:

The wearable electrocardiogram (ECG) sensor has immense potential for cardiovascular healthcare monitoring. However, uploading ECG signals to server-side devices for diagnosis poses privacy risks. Multi-tasking ECG processors rely on multi-beat windows and complex models, leading to high latency and energy consumption that limit deployment in resource-constrained wearable devices. In this …

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PANDA: A Reconfigurable Seizure Prediction and Detection Neural Network Accelerator for Epilepsy Monitoring

PANDA: A Reconfigurable Seizure Prediction and Detection Neural Network Accelerator for Epilepsy Monitoring 150 150

Abstract:

For effective healthcare management of epilepsy patients in a non-hospital environment, continuous monitoring of EEG signals is crucial, where wearable intelligent devices are essential. The existing seizure monitoring devices, however, cannot achieve high sensitivity, a short detection latency, a low false alarm rate (FAR), as well as ultra-low-power computing simultaneously. …

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