IEEE Journal of Solid-State Circuits – Early Access

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A Scalable 1024-Channel Ultra-Low-Power Spike Sorting Chip With Event-Driven Detection and Spatial Clustering

A Scalable 1024-Channel Ultra-Low-Power Spike Sorting Chip With Event-Driven Detection and Spatial Clustering 150 150
Author(s): Arash Akhoundi, Pumiao Yan, Yawende Landbrug, Madeline Hays, Boris Murmann, E. J. Chichilnisky, Dante G. Muratore

Abstract:

This article presents a 1024-channel ultra-low-power spike sorting chip featuring event-driven spike detection and spatial clustering for large-scale neural recording. To address power and scalability constraints in brain–computer interfaces (BCIs), the design integrates a compressive analog-to-digital converter (ADC) with a two-stage spike detector that significantly reduces memory and processing …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3611139
Publisher: IEEE

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Ultra-Low-Power Dynamic-Bias Comparators With Self-Clocked Latch in 65-nm CMOS

Ultra-Low-Power Dynamic-Bias Comparators With Self-Clocked Latch in 65-nm CMOS 150 150
Author(s): Anojh Kumaran Rajendra, Harijot Singh Bindra, Bram Nauta

Abstract:

This article introduces two comparators featuring a dynamic-bias preamplifier and self-clocked latches, tailored for ultra-low-power and medium-speed applications with <500- $\mu $ V input-referred noise (IRN). The proposed self-clocked latches are activated by the preamplifier outputs and therefore operate with a lower common-mode current, which in turn minimizes the crowbar current …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3612157
Publisher: IEEE

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DPIM: A 2T1C eDRAM Transformer-in-Memory Chip With Sparsity-Aware Quantization and Heterogeneous Dense–Sparse Core

DPIM: A 2T1C eDRAM Transformer-in-Memory Chip With Sparsity-Aware Quantization and Heterogeneous Dense–Sparse Core 150 150
Author(s): Donghyuk Kim, Jae-Young Kim, Hyunjun Cho, Seungjae Yoo, Sukjin Lee, Sungwoong Yune, Sejeong Yang, Hoichang Jeong, Keonhee Park, Ki-Soo Lee, Jongchan Lee, Chanheum Han, Gunmo Koo, Yuli Han, Jaejin Kim, Jaemin Kim, Kyuho Jason Lee, Joo-Hyung Chae, Kunhee Cho, Joo-Young Kim

Abstract:

Transformer models have revolutionized artificial intelligence (AI) applications across various domains, but their increasing complexity poses significant challenges in terms of computational and memory demands. While processing-in-memory (PIM) paradigms have been adopted to address these limitations, existing PIM-based transformer accelerators still face hurdles such as: 1) focusing solely on optimizing attention …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3607826
Publisher: IEEE

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A 25.8% 3σ/μ-Accuracy, 0.12%/°C Temperature Drift Sigma-Delta Modulation Calibrated Pseudo-Resistor With GΩ to TΩ Tuning Range

A 25.8% 3σ/μ-Accuracy, 0.12%/°C Temperature Drift Sigma-Delta Modulation Calibrated Pseudo-Resistor With GΩ to TΩ Tuning Range 150 150
Author(s): Yuzhi Hao, Hua Fan, Yong Lian, Mingyi Chen

Abstract:

This article presents an on-chip self-calibrated pseudo-resistor (PR) based on a sigma-delta modulation (SDM) loop. The proposed real-time calibration mechanism facilitates the implementation of an accurate low-drift ultra-high-value (UHV) PR with a wide tuning range at minimum hardware expenditure. Experimental results demonstrate that the resistance can be precisely tuned from 1.5 …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3612895
Publisher: IEEE

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A Low-Jitter Fractional-N Digital PLL Using a Quantization-Error-Compensating BBPD and an Orthogonal-Polynomial-Based LMS Calibration

A Low-Jitter Fractional-N Digital PLL Using a Quantization-Error-Compensating BBPD and an Orthogonal-Polynomial-Based LMS Calibration 150 150
Author(s): Munjae Chae, Seheon Jang, Seungjae Lee, Jaehyouk Choi

Abstract:

This work presents a 10.0–11.5-GHz fractional- $N$ digital phase-locked loop (DPLL) using the quantization-error-compensating bang–bang phase detector (QEC-BBPD) that can minimize both the static delay ( $T_{\mathrm {S}}$ ) and the dynamic delay ( $T_{\mathrm {D}}$ ) required for removing the delta-sigma modulator’s ( $\Delta \Sigma $ M) quantization-error (Q-error). Since the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3611417
Publisher: IEEE

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A 0.5-/0.95-dB NF, 50-/25-Ω Configurable CMOS Front-End ASIC for the Readout of Liquid Argon Calorimeter in the LHC

A 0.5-/0.95-dB NF, 50-/25-Ω Configurable CMOS Front-End ASIC for the Readout of Liquid Argon Calorimeter in the LHC 150 150
Author(s): Mietek Dabrowski, Filip Tavernier, Paul Leroux

Abstract:

This article presents the design of a four-channel front-end application specific integrated circuit (ASIC), ATLAS liquid argon front-end (ALFE), developed for the readout of the liquid-argon calorimeter (LAr) detector in the ATLAS experiment at the Large Hadron Collider (LHC). ALFE enables the readout of current signals induced in the LAr …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3602751
Publisher: IEEE

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A 180-nm Voltage-Controlled Magneto-Electric RAM With Sub-1-ns Switching Time

A 180-nm Voltage-Controlled Magneto-Electric RAM With Sub-1-ns Switching Time 150 150
Author(s): Haris Suhail, Haoran He, Vinod Kurian Jacob, Jiyue Yang, Kang L. Wang, Sudhakar Pamarti

Abstract:

Memory performance has emerged as a critical factor influencing both system speed and energy efficiency. However, conventional memory technologies such as embedded Flash (eFlash) and static RAM (SRAM) encounter significant scalability limitations beyond the 28-nm CMOS node. Among novel emerging memory technologies, spin-transfer-torque magnetic RAM (STT-MRAM) has gained prominence due …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3609342
Publisher: IEEE

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EdgeDiff: Energy-Efficient Multi-Modal Few-Step Diffusion Model Accelerator Using Mixed-Precision and Reordered Group Quantization

EdgeDiff: Energy-Efficient Multi-Modal Few-Step Diffusion Model Accelerator Using Mixed-Precision and Reordered Group Quantization 150 150
Author(s): Sangjin Kim, Jungjun Oh, Jeonggyu So, Yuseon Choi, Sangyeob Kim, Dongseok Im, Gwangtae Park, Hoi-Jun Yoo

Abstract:

Recent advances in diffusion models (DMs)—such as few-step denoising and multi-modal conditioning—have significantly improved computational efficiency and functional flexibility, but they also introduce new hardware challenges. In particular, the elimination of inter-timestep redundancy, increased encoder/decoder workload, and heightened sensitivity to quantization demand a new class of accelerator. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3611456
Publisher: IEEE

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A Radiated-EMI-Reduced Touch AFE IC With Pipelined Dual-Frequency Modulation and Sine2 Waveform Shaping for Automotive Applications

A Radiated-EMI-Reduced Touch AFE IC With Pipelined Dual-Frequency Modulation and Sine2 Waveform Shaping for Automotive Applications 150 150
Author(s): Seokhyeon Moon, Byoungseok Yoo, Minsu Kim, Jonghang Choi, Jun-Eun Park

Abstract:

This article presents an analog front-end (AFE) for automotive touch-screen sensors that reduces radiated emission (RE) from touch-screen panel (TSP) driving signals while maintaining touch sensing performance. The proposed touch AFE employs a sine–sine (Sine2) waveform shaping and a sine-chirp spread spectrum (SCSS) clocking to suppress both harmonic components …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3612397
Publisher: IEEE

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